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| 工艺能力 |
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- Minimum Pattern : ~0.35um( i line )
- Deep trench technology : ~10um
- Furnace process : ~1200℃
- Implanter process : ~200KeV, (400KeV)
- Life time control Technology : FRD, FRMOS.
- Various barrier material for SBD : Ni, Pt, NiPt, NiCrPt, …
- Various Films : Poly Crystal, USG, PSG, BPSG, TEOS Oxide, Nitride, PIQ…
- Front metal : Ti, TiN, Aluminum. …..
- Grinder Process : ~100um
- Back metal : Ti, Ni, Ag ….
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